SEMICONDUCTOR METAMORPHIC NANOHETEROSTRUCTURE InAlAs/InGaAs Russian patent published in 2013 - IPC H01L29/737 B82B1/00 

FIELD: electricity.

SUBSTANCE: in a semiconductor metamorphic nanoheterostructure, comprising a single-crystal semi-insulating substrate GaAs, a superlattice Al_0.4Ga_0.6As/GaAs, a metamorphic buffer In_xAl_1-xAs with linear increase of InAs content x in thickness (x=x₁→x₄, where x₁~0, x₄≥0.75), an inverse layer In_xAl_1-xAs with smooth or uneven reduction of InAs content x in thickness (x=x₄→x_4', where x₄ ^,-x₄=^:0.05÷0.1, x_4'≥0.7), a curing layer with homogeneous composition In_xAl_1-xAs, an active area InAl As/InGaAs with high InAs content, agreed along the lattice perimeter with the curing layer, inside the metamorphic buffer there are two mechanically stressed superlattices In_(x2+Δx)Al_1-(x2-Δx)As/In_(x2-Δx)Ga_1-(x2-Δx)As and In_(x3+Δx)Al_1-(x3+Δx)As/In_(x3-Δx)Ga_1-(x3-Δx)As introduced, symmetrically mismatched at Δx=0.05÷0.10 relative to the current composition of the metamorphic buffer in these points, which divide the metamorphic buffer into three parts, in every of which the content of InAs x in thickness increases accordingly from x₁ to x₂, from x₂ to x₃ and from x₃ to x₄, where 0.4<x₂<0.6, and 0.6<x₃<0.75.

EFFECT: reduced density of dislocations penetrating an active area of a nanoheterostructure.

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