METHOD OF FORMING SYMMETRIC QUANTUM DOTS Russian patent published in 2024 - IPC H01L21/22 B82B3/00 

FIELD: electronics; optoelectronics.

SUBSTANCE: proposed method relates to electronics and optoelectronics and can be used to create structures of active elements of nano- and optoelectronics and integrated circuits based thereon. Method of forming symmetric quantum dots consists in the fact that at first on the surface of the semiconductor substrate with technological orientation (100), homogeneous symmetrical recesses in the form of an inverted pyramid are formed due to anisotropic local drop etching, then selective formation of quantum dots is carried out by depositing a solid substitution solution of variable composition (In, Al)_xGa_1-xAs on a surface with recesses, as a result of which there is a diffusion decomposition of the solid substitution solution in the recess due to different diffusion length of the components of the quantum well material, as a result of which in recesses there is selective self-consistent formation of symmetric quantum dots.

EFFECT: formation of symmetric quantum dots on the surface of a semiconductor substrate with technological orientation (100).

1 cl, 1 dwg