SEMICONDUCTOR NANOHETEROSTRUCTURE INALAS/INGAAS WITH METAC METAMORPHIC BUFFER Russian patent published in 2013 - IPC H01L29/737 B82B1/00 

FIELD: electricity.

SUBSTANCE: in a semiconductor metamorphic nanoheterostructure InAlAs/InGaAs, comprising a single-crystal semi-insulating substrate GaAs, a superlattice AlGaAs/GaAs, a buffer layer GaAs, a metamorphic buffer In_xAl_1-xAs with thickness of 1.0÷0.5 mcm with linear increase of InAs content x in thickness from x₁ to x₄, where X₁~0, x₄≥0.75, an inverse layer In_xAl_1-xAs with smooth reduction of InAs content x in thickness from x₄ to x_4', where x₄-x_4'=0.03÷0.08, a curing layer with a homogeneous composition In_x4'Al_1-x4'As, the active area InAlAs/InGaAs with high content of InAs (more than 70%), agreed along the lattice parameter with the curing layer, inside the metamorphic buffer at equal distances from each other and from the buffer borders there are two inverse layers introduced with smooth reduction of InAs content x in thickness by Δx=0.03÷0.06, every of which is followed by the curing layer having the composition matching the final composition of the inverse layer.

EFFECT: reduced density of dislocations penetrating an active area of a nanoheterostructure.

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