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2 650 576

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IPC

H01L29/00(2006-01-01)

B82Y99/00(2011-01-01)

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Application

2016139392, 2016-10-07

(24)

Start date

2016-10-07

(22)

Actual filing date

2016-10-07

(45)

Published

2018-04-16

(72)

Inventor

Bugaev Aleksandr SergeevichYachmenev Aleksandr EduardovichPonomarev Dmitrij SergeevichKhabibullin Rustam AnvarovichGamkrelidze Sergej AnatolevichMaltsev Petr Pavlovich

(73)

Holder

Federalnoe Gosudarstvennoe Byudzhetnoe Uchrezhdenie Nauki Institut Sverkhvysokochastotnoj Poluprovodnikovoj Elektroniki Rossijskoj Akademii Nauk Ran)

NANODIMENSIONAL STRUCTURE WITH ALLOYING PROFILE IN FORM OF NANOWIRES FROM TIN ATOMS Russian patent published in 2018 - IPC H01L29/00 B82Y99/00

Abstract RU 2650576 C2

FIELD: metallurgy.

SUBSTANCE: nanodimensional structure with nanowires from tin atoms, embedded in a GaAs crystal, includes a single-crystal semi-insulating vicinal GaAs (100) substrate with misorientation angle of 0.3°÷0.4° in the direction of type <011>, a buffer undoped GaAs layer, a delta-alloyed tin layer, and a contact silicon-alloyed GaAs layer; an InGaAs channel layer, an AlGaAs spacer layer, and an AlGaAs barrier layer are additionally added, and two-dimensional electron gas located in InGaAs channel layer is modulated in form of quasi-one-dimensional channels.

EFFECT: ensuring the possibility of increasing the speed of microwave devices based on this structure.

1 cl

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RU 2 650 576 C2

Authors

Bugaev Aleksandr Sergeevich

Yachmenev Aleksandr Eduardovich

Ponomarev Dmitrij Sergeevich

Khabibullin Rustam Anvarovich

Gamkrelidze Sergej Anatolevich

Maltsev Petr Pavlovich

Dates

2018-04-16—Published

2016-10-07—Filed