LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE Russian patent published in 2012 - IPC H01L21/308

Abstract RU 2468467 C2

FIELD: chemistry.

SUBSTANCE: liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed from a silicon oxide film contains caesium hydroxide, an alkaline organic compound and water, wherein the weight ratio of caesium hydroxide to the liquid composition ranges from 1 wt % to 40 wt % inclusively.

EFFECT: high rate of anisotropic etching of silicon while reducing etching of the silicon oxide film used as a mask.

7 cl, 4 dwg, 2 tbl

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RU 2 468 467 C2

Authors

Abo Khirojuki

Jonemoto Taiti

Kojama Sudzi

Furusava Kenta

Kisimoto Kejsuke

Dates

2012-11-27—Published

2011-01-27—Filed