FIELD: process engineering.
SUBSTANCE: method of producing said head including silicon substrate and inlet channel comprises: producing silicon substrate including isolating layers on first surface and mask layers with etching holes substrate other surface. Note here that said insulating layer is located in section extending from position opposite section between adjacent mask layer holes, and producing holes by etching section of silicon substrate so that etched section extends to insulated layer section opposite aforesaid hole. Silicon substrate located between adjacent holes is subjected to etching so that secintion on its first surface may be thinner than that on its second surface.
EFFECT: higher hardness of thus produced head and higher efficiency.
5 cl, 35 dwg
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