FIELD: electronic equipment.
SUBSTANCE: invention relates to electronics and can be used in designing solar cells, which are used in power engineering, space and military technologies, mining, oil refining, chemical industries, etc. Solar element comprises crystalline substrate of n-type silicon (n)c-Si orientation (100) with front and rear surfaces, over front surface are arranged in series: intermediate layer of amorphous hydrogenated silicon carbide in form of solid solution; undoped layer of amorphous hydrogenated silicon (i)a-Si:H; p-doped layer of amorphous hydrogenated silicon (p)a-Si:H; layer of indium-tin oxide (ITO); silver contact grid. At that, above back surface are arranged in series: intermediate layer of amorphous hydrogenated silicon carbide in form of solid solution; undoped layer of amorphous hydrogenated silicon (i)a-Si:H; n-doped layer of amorphous hydrogenated silicon (n)a-Si:H; indium-tin oxide layer ITO; layer of silver Ag.
EFFECT: invention allows to improve passivation of surface due to prevention of partial epitaxial growth during application of amorphous hydrogenated silicon with thickness of 2-5 nm on crystalline substrate, which in turn leads to increase in idling voltage and, consequently, efficiency of converting solar radiation.
14 cl, 3 dwg
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Authors
Dates
2016-07-10—Published
2015-04-10—Filed