REACTOR FOR POLYCRYSTALLINE SILICON AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON Russian patent published in 2012 - IPC C30B28/14 C30B29/06 C30B25/14 C01B33/35 C23C16/24 

FIELD: metallurgy.

SUBSTANCE: invention relates to production of polycrystalline silicon. Reactor comprises silicon target rod arranged there inside and electrically heated, branch pipes 6 to feed gaseous initial material arranged at reactor bottom 2, nozzle 10 feed gaseous initial material extending from bottom to top from said branch pipes 6 to allow communication there between. Note here that nozzle 10 feature taper cylindrical shape and comprises through hole 12, outer peripheral side surface 11, inner peripheral side surface 12a, smaller-diameter surface 13 atop nozzle 10, larger-diameter surface 15 making the face surface on side opposite surface 13, hole 14 made in surface 13, and cylindrical hole 16 made in surface 15. Note here that outer peripheral side surface 11 and inner peripheral side surface 12a of through hole 12 made inside nozzle 10 decrease in diameter in upward direction, cylindrical hole 16 has central axis aligned with that of through hole 12, cylindrical hole 16 is fitted on branch pipe 6 to feed gaseous initial material. This allows nozzle 10 to be secured to branch pipe 6. Top edge 13 of nozzle 10 is located -10 cm to +5 cm from electrode top edge retaining silicon target rod.

EFFECT: higher quality and yield.

6 cl, 4 dwg, 2 tbl