FIELD: technological processes.
SUBSTANCE: invention may be used in chemical industry. Polycrystalline silicon is produced by blowdown and thermal conversion of silanes inside silicon tubular element heated up to temperature of 750°C ÷ 1000°C. Internal volume of tubular element that corresponds in size to heating zone is filled with porous medium made of compacted silicon fragments in the form of needles or fibers having cross section diametre from 10 to 200 µm. Density of tube internal volume filling with needle fragments prior to blowdown of silanes makes 10 ÷ 60%. Dislocation of silanes inside tubular element filled with silicon fragments is realised until tube internal volume density increases - from initial one to 85 ÷ 90%.
EFFECT: increased efficiency of silicon deposit in process of silanes pyrolysis, reduced energy intensity of this process.
3 cl, 2 tbl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| SILICON HYDRIDES PROCESS | 2007 |
|
RU2357924C2 |
| METHOD OF OBTAINING SILICON | 2005 |
|
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| METHOD OF PRODUCING NANOSIZE SILICON STRUCTURES | 2013 |
|
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| MAGNESIUM SILICIDE SYNTHESIS METHOD | 2007 |
|
RU2376243C2 |
| PROCEDURE FOR FORMING LAYER OF POLY-CRYSTALLINE SILICON ON CORE BASE | 2010 |
|
RU2428525C1 |
| METHOD OF CONTINUOUS PYROLYTIC SATURATION OF POROUS ELONGATED MATERIAL | 2008 |
|
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| METHOD FOR FORMATION OF PLANAR STRUCTURES BY THE METHOD OF ATOMIC-POWER LITHOGRAPHY | 2017 |
|
RU2659103C1 |
| METHOD FOR PREPARATION OF POLYCRYSTALLINE HIGH-PURITY SILICON AND DEVICE THEREOF (VERSIONS) | 2006 |
|
RU2367599C2 |
| METHOD FOR PRODUCING HETEROEPITAXIAL LAYERS OF III-N COMPOUNDS ON MONOCRYSTALLINE SILICON WITH 3C-SIC LAYER | 2020 |
|
RU2750295C1 |
| METHOD OF PRODUCING SILICON FILAMENTS WITH ARBITRARY CROSS-SECTION (VERSIONS) | 2012 |
|
RU2507318C1 |
