FIELD: metallurgy.
SUBSTANCE: method is implemented in a reactor containing a bottom plate forming a lower part of the reactor and a bell-shaped vacuum cap attached to the bottom plate so that it can be removed, in which on the bottom plate there located is a variety of gas inlet holes for supply of raw gas in upward direction to the reactor, and gas outlet holes for discharge of waste gas after the reaction, and in which the variety of gas inlet holes is located concentrically along the whole surface area enveloping the upper surface of the bottom plate, in which many silicon target rods are installed; at that, silicon target rods are heated and polycrystalline silicon is deposited from raw gas on surfaces of silicon target rods. Supply of raw gas from gas inlet holes is stopped near the reactor centre during the specified period of time while raw gas is being supplied form other gas inlet holes at early stage of the reaction, and a way for descending gas flow is provided after it collides with vacuum cap ceiling.
EFFECT: invention allows efficient production of high-quality polycrystalline silicon.
8 cl, 6 dwg
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