METHOD OF PRODUCING CONTACT PHOTOMASK WITH SUBMICRON AND NANOMETRIC DESIGN RULES Russian patent published in 2012 - IPC G03F1/00 G03F7/00 H05K3/00 

FIELD: physics, photography.

SUBSTANCE: invention relates to microelectronics and specifically to methods of producing contact photomasks with submicron and nanometric design rules and can be used in producing photomasks for producing acoustoelectric devices operating on surface and volume acoustic waves. In the method of producing contact photomasks with submicron and nanometric design rules, a photomask for projection photolithography with dimensions which are N times larger than those of the contact photomask is made and using that photomask for projection photolithography and apparatus for projection photolithography which reduce the size the transferred drawing N times, the image is transferred onto circular wafers made of material which is transparent for UV radiation, having dimensions which correspond to linear dimensions of silicon wafers used to produce integrated circuits using said apparatus for projection photolithography, and contact photomasks are made from said special circular wafers.

EFFECT: N-fold reduction in edge roughness of the image transferred onto the contact photomask compared to edge roughness of the image on the working photomask for projection photolithography produced, and cutting the cost of producing the contact photomask by forming the primary image on the working photomask for projection photolithography with a scale magnified N times and possibility of multiple reproduction of the topology of the working photomask on circular wafers used as contact photomask workpieces.

3 cl, 1 ex