METHOD OF MAKING T-SHAPED GATE OF FIELD-EFFECT TRANSISTOR Russian patent published in 2025 - IPC H10D30/01 

FIELD: electricity.

SUBSTANCE: invention relates to production of microelectronics and semiconductor devices. Method of manufacturing a T-shaped gate of a field-effect transistor comprises depositing a first dielectric layer on a semiconductor substrate, formation of a photoresist mask for etching a window in a first dielectric layer, anisotropic plasma-chemical etching of the first dielectric layer to create a window therein, conformal deposition of a second dielectric layer on the first dielectric layer, anisotropic plasma-chemical etching of the second dielectric layer, formation of a metallization of the T-shaped gate. In method according to invention performing cyclic repetition of the deposition and etching operations of the second dielectric layer, wherein the first and second dielectric layers are made thin, and the composition of the second dielectric layer is identical in composition to the first dielectric layer.

EFFECT: high resolution of process during formation of gates on plate with provision of gate side walls inclination angle of more than 45°, as well as in simplification of manufacturing technology.

4 cl, 26 dwg