FIELD: physics.
SUBSTANCE: use: for the manufacture of microwave heterotransistors. Essence of the invention lies in the fact that the heterostructure with a composite active region with quantum dots contains introduced barriers in the form of quantum dots in the quantum well, using the material of the composite quantum well, which composition and characteristics, including the band structure and effective carrier masses, provide an increased quantum limited carrier drift velocity.
EFFECT: providing the possibility of increasing the speed and improving the energy parameters and frequency characteristics of microwave devices.
9 cl, 7 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| SPIN HETEROSTRUCTURE WITH COMPOSITE ACTIVE REGION WITH QUANTUM DOTS | 2023 |
|
RU2822632C1 |
| LIGHT-EMITTING DIODE | 2009 |
|
RU2400866C1 |
| METHOD FOR PRODUCING QUANTUM STRUCTURES: QUANTUM WIRES, QUANTUM DOTS, COMPONENTS OF QUANTUM DEVICES | 2004 |
|
RU2278815C1 |
| SEMICONDUCTOR NANOHETEROSTRUCTURE INALAS/INGAAS WITH METAC METAMORPHIC BUFFER | 2011 |
|
RU2474924C1 |
| LUMINESCENT INK FOR CRYPTOGRAPHIC PROTECTION OF DOCUMENTS AND ARTICLES FROM FALSIFICATION, METHODS FOR APPLICATION THEREOF AND METHODS OF VERIFYING SAID ARTICLES | 2011 |
|
RU2503705C2 |
| METHOD OF FORMING BUFFER ARCHITECTURE (VERSIONS) AND MICROELECTRONIC STRUCTURE FORMED THUS | 2009 |
|
RU2468466C2 |
| SEMICONDUCTOR STRUCTURE WITH ACTIVE ZONE (ALTERNATIVES) | 2005 |
|
RU2328795C2 |
| SEMICONDUCTOR METAMORPHIC NANOHETEROSTRUCTURE InAlAs/InGaAs | 2011 |
|
RU2474923C1 |
| METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE | 2013 |
|
RU2632256C2 |
| METHOD FOR COUNTERFEIT PROTECTION AND CONTROL OF PRECIOUS ITEMS AUTHENTICITY BASED ON CIRCULAR PHOTOVOLTAIC EFFECT AND SEMICONDUCTING NANOSTRUCTURES | 2007 |
|
RU2356093C1 |
