SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2015 - IPC H01L29/772 B82B1/00 

FIELD: electricity.

SUBSTANCE: semiconductor heterostructure for power SHF FET comprises at monocrystalline semi-insulating substrate of gallium arsenide a sequence of semiconductor layers, each of them having preset functional properties and technical specifications of layer thickness, qualitative and quantitative composition, concentration of dopant concentration. Semiconductor heterostructure is made as direct sequence of the following semiconductor layers: buffer layer of GaAs with thickness of (150-400) nm, donor layer of GaAs with thickness of (2-3) nm doped with silicon of concentration of (6-8)×10¹⁸ cm^-3, spacer layer of GaAs with thickness of (2-5)nm, channel layer of In_yGa_1-yAs with thickness of (8-12)nm with content of chemical agents at y equal to (0.21-0.28), spacer layer of Al_xGa_1-xAs with thickness of (2-5)nm, with content of chemical agents at x equal to (0.20-0.24), donor layer of Al_xGa_1-xAs with thickness of (3-6) nm doped with silicon of concentration of (5-8)×10¹⁸ cm^-3, with content of chemical agents at x equal to (0.20-0.24), barrier layer of Al_xGa_1-xAs with thickness of (10-30) nm, with content of chemical agents at x equal to (0.20-0.24), stop layer of In_yGa_1-yP with thickness of (2-4) nm with content of chemical agents at y equal to (0.48-0.51), barrier layer of Al_xGa_1-xAs with thickness of 10-20 nm, with content of chemical agents at x equal to (0.20-0.24), gradient layer of Al_xGa_1-xAs with thickness of (8-12) nm doped with silicon of concentration of (3-5)×10¹⁸ cm^-3 with thickness of (8-12) nm doped with silicon of concentration of (3-5)×10¹⁸ cm^-3, with content of chemical agents at x equal to (0.20-0.24), with linear modification of x up to zero in the layer thickness from side of semi-insulating gallium arsenide, contact layer of GaAs consisting of two parts - the lower, with thickness of (30-50) nm doped with silicon of concentration of (3-5)×10¹⁸ cm^-3 and the upper, with thickness of (10-20) nm doped with silicon of concentration of (8-10)×10¹⁸ cm^-3, at that quantitative composition of the above semiconductor layers is expressed in mole fractions.

EFFECT: reduced density of defects and increased yield of fit semiconductor heterostructures, increased output power and upper boundary of frequency range and respective widening of operating frequency range for power SHF FET and increased yield of fit transistors.

2 cl, 1 dwg, 1 tbl