HETEROEPITAXIAL STRUCTURE FOR FIELD TRANSISTORS Russian patent published in 2018 - IPC H01L29/772 

FIELD: electrical equipment.

SUBSTANCE: heteroepitaxial structure refers to semiconductor devices. On the substrate, layers are made in which a channel layer of a narrow-gap semiconductor is formed. Both sides of the channel layer, in the directions to the substrate and from the substrate, have consecutively-located layer of undoped wide-gap semiconductor, layer of doped wide-gap semiconductor formed as a delta layer in a semiconductor matrix δ- by means of doping, separating the barrier layer of the undoped wide-gap semiconductor, layer of doped wide-gap semiconductor formed as a delta layer in a semiconductor matrix δ- by means of doping, layer of wide-gap semiconductor consisting of two undoped layers, between which doped layer is located, being allowed with an impurity providing a different type of conductivity compared to the conductivity of the doped wide-gap conductor layer formed as a delta layer in the semiconductor matrix δ- by means of doping. Delta layers nearest to the channel layer are doped with a layer concentration of the impurity equal to half the value of the concentration of the two-dimensional carrier gas formed during the transition of charge carriers from the admixture of delta layers to the channel layer. Delta layer farthest from the channel layer, made in the direction toward the substrate, is doped with a layer concentration of the impurity equal in magnitude to the product of the thickness and impurity concentration of the impurity located between the two undoped layers of the layer doped with the impurity providing a different type of conductivity compared to the conductivity of a layer of a doped wide-gap conductor formed as a delta layer in a semiconductor matrix δ- by means of doping, which are formed as a part of a wide-gap semiconductor layer located in the direction to the substrate. Delta layer farthest from the channel layer, made in the direction from the substrate, is doped with a layer concentration of the impurity equal in magnitude to the product of the thickness and impurity concentration between the two undoped layers of the layer doped with the impurity, providing a different type of conductivity compared to the conductivity of a layer of a doped wide-gap conductor formed as a delta layer in a semiconductor matrix δ- by means of doping, which are formed as a part of a wide-gap semiconductor layer located in the direction from the substrate.

EFFECT: increase in mobility in a two-dimensional carrier gas while maintaining their concentration at 4×10¹² cm^-2.

20 cl, 4 dwg