MATERIAL FOR EFFICIENT GENERATING TERAHERTZ RADIATION Russian patent published in 2018 - IPC H01L27/15 H01L33/26 

FIELD: physics.

SUBSTANCE: photoconductive material with a high intensity of generating terahertz (THz) radiation is proposed. The material is intended for use in the pulsed and continuous (photomixing) generation of THz radiation. The proposed material is a photoconductive layer In_xGa_1-xAs with the mole fraction of indium (x)≥30%, epitaxially grown on a metamorphic step buffer on a GaAs substrate (100), the photoconductive layer In_xGa_1-xAs with the thickness of 1.0-1.5 mcm grows unstressed on the GaAs substrate by using the metamorphic step buffer, which allows the indium composition in the photoconductive layer to vary up to 100%.

EFFECT: simplifying the technological process of the material manufacture.

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