METHOD FOR FABRICATION OF STRUCTURES IN MICROELECTRONICS Russian patent published in 2000 - IPC

FIELD: microelectronics, in particular, reverse lithography method. SUBSTANCE: method involves application of positive resistive layer on substrate, pattern exposition, development, application of additional layer and removal of resistive layer. Goal of invention is achieved by preliminary application of material on substrate, exposition of resistive layer by electron beam, which is factor of 2-3 less than sensitivity of electron resistive layer, and after development, exposition of features generated in resistive layer by ultraviolet light with wavelength of 200-300 nm, and power of 1.5-3 kJ per sq. cm in air or oxygen. After removal of resistive layer method involves film material etching, complete removal of electron resistive layer using reverse lithography after application of additional layer. EFFECT: increased sensitivity of electron resistive layer due to additional exposition to ultraviolet light and decreased exposition to electron beam; decreased deviation in size of submicron features from defined values, elimination of etching resistive layer without electron beam exposition due to selective absorption of ultraviolet light. 1 dwg, 8 ex