METHOD FOR SELECTING PLATES WITH RADIATION-RESISTANT MOS INTEGRATED CIRCUITS Russian patent published in 1997 - IPC

Abstract RU 2082178 C1

FIELD: microelectronics. SUBSTANCE: method for selecting plates with radiation-resistant MOS integrated circuits during their production phase involves measurement of threshold voltages and input currents of integrated circuits before and after their exposure to X-rays of 10 keV. Then mean rate of change of threshold voltages of test transistors across X_ipl plate and mean rate of change of voltages of test transistors across plate X_cr with critical parameters are determined, and plates with radiation-resistant integrated circuits are selected according to condition X_ipl < X_cr. EFFECT: facilitated procedure. 1 dwg

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RU 2 082 178 C1

Authors

Shumilov A.V.

Frolov L.N.

Fedorovich Ju.V.

Dates

1997-06-20—Published

1995-03-21—Filed