BONDED SEMICONDUCTOR RESISTIVE STRAIN GAUGE Russian patent published in 2013 - IPC H01L29/84 

FIELD: measurement equipment.

SUBSTANCE: resistive strain gauge includes polymer substrate 1, separating dielectric film 2, for example from silicon monoxide, strain-sensitive film 3 from samarium monosulphide, contact metal platforms 4, which are located on its ends, and metal films made in the form of straps 5 located on strain-sensitive film 3, in parallel and at some distance from each other; at that, they are connected next but one to opposite contact platforms 4 and serve as shunts, and non-shunted part of the strain-sensitive film obtains the shape of a meander.

EFFECT: possibility of obtaining a resistive strain gauge with high strain sensitivity and low electric resistance at small sizes.

3 dwg