ADHERED SEMICONDUCTOR RESISTANCE STRAIN GAGE OF DEFORMATIONS FOR STRENGTH TESTING Russian patent published in 2015 - IPC H01L29/84 G01B7/16 

FIELD: measurement equipment.

SUBSTANCE: invention relates to measurement equipment and may be used to measure deformations under conditions of homogeneous deformation fields in process of strength testing. Substance: the gage comprises a carrier 1 from thin metal foil. In the carrier 1 by means of rectangular holes 2 there are two thin threads 3 and a site 4 between them. A thin separating dielectric film 5 is deposited onto the carrier 1, which follows the shape of the carrier 1. Strain-sensing elements 6, 7 from samarium monosulphide are deposited on the dielectric film 5 and are connected into a Wheatstone bridge, as well as metal contact sites 8, which are inlet and outlet contacts of the gage. In the carrier 1 there might be two additional through slots arranged, each starting from the middle of the appropriate extreme rectangular hole 2 and is perpendicular to it, creating sites, where metal contact sites are arranged.

EFFECT: increased output signal, temperature independence.

2 cl, 4 dwg