PASTE-ON SEMICONDUCTOR STRAIN GAGE Russian patent published in 2014 - IPC G01B7/16 

FIELD: instrumentation.

SUBSTANCE: strain gage comprises carrier composed of metal foil in the form of thread with sites at its ends, polymer substrate formed at carrier one side, dielectric film and strain-sensitive film from polycrystalline samarium polysulfide arranged at opposite aside, as metal film applied on said strain-sensitive film. Carrier thread ends are shaped to bracket element with its ends connected to center of sides of aforesaid sites. Or carrier thread has crosswise strips at its ends. Dielectric and strain-sensitive films follow the carrier shape. Aforesaid metal film acts as electric contacts and, also, follows the carrier shape but with a break it its center.

EFFECT: higher precision of measurements.

2 cl, 7 dwg