BONDED SEMICONDUCTOR RESISTIVE STRAIN GAUGE Russian patent published in 2014 - IPC H01L29/84 

FIELD: measurement equipment.

SUBSTANCE: bonded resistive strain gauge includes a polymer substrate, and a carrier from thin metal foil in the form of rectangular platforms connected with a strip. A separating dielectric film is made on the carrier and repeats its shape and dimensions. The resistive strain gauge also includes a strain-sensitive film from polycrystalline samarium monosulphide and two metal-film platforms. Each metal-film platform is located on the separating dielectric film and represents a rectangular platform with a projection in the form of a strip; length of each strip provides for their mutual overlap in the central part of the resistive strain gauge, and the strain-sensitive film is made in the form of a strip located between ends of projections of metal-film platforms in their overlap zone.

EFFECT: invention allows reducing electrical resistance of a resistive strain gauge by providing high strain sensitivity at small sizes and by supplying current normally to the plane of the strain-sensitive strip which is located between projections of metal films in their mutual overlap zone.

5 dwg