BOUNDED SEMICONDUCTOR STRAIN GAUGE Russian patent published in 2012 - IPC H01L29/84 G01B7/16 

FIELD: electricity.

SUBSTANCE: bounded semiconductor strain gauge contains a polymer substrate 1 (made, for example, of lacquer VL-931 with a thickness of 20÷30 mcm), a carrier 2 made of thin (3÷10 mcm) metal (for example, constantan) foil, a dielectric separating film 3 (for example, of silicon monoxide SiO) with a thickness of (1÷3 mcm) formed on the carrier 2 and a strain-sensitive film 4 (on the film 3) of samarium monosulphide (SmS) with a thickness of 0.5÷1 mcm. The carrier 2, after a lithographic operation, represents two pads connected to with a string with a width of 50÷200 mcm (dumb-bell shape). The dielectric film 3 and the strain-sensitive films 4 sedimented on the carrier 2 also repeat the carrier shape while the metal contacts 7 are made, for example, of nickel with a thickness of 1÷2 mcm and are located at the ends of the strain-sensitive film 4 strings on its wide pads. The polymer substrate 1 is formed on the reverse side of the carrier 2.

EFFECT: enhancement of axial sensitivity to deformation and transversal sensitivity reduction.

3 cl, 6 dwg