CRYSTAL OF A HIGH-VOLTAGE HYPERSPEED HIGH-CURRENT DIODE WITH A SCHOTTKY BARRIER AND P-N JUNCTIONS Russian patent published in 2023 - IPC H01L29/872 

FIELD: semiconductor devices.

SUBSTANCE: crystal of a high-voltage hyperspeed high-current diode with a Schottky barrier and p⁺-n junctions with unipolar conductivity, the cathode part of which comprises a highly doped single-crystal substrate of n⁺-type conductivity with an epitaxial layer of n-type conductivity made on it, and the anode part comprises multicellular p⁺-n transitions in the near-surface volume of the n-type epitaxial layer and the Schottky barrier on the surface of the epitaxial layer of the n-type conductivity, ohmic contacts to the p⁺-regions of the p⁺-n junction and the Schottky barrier. According to the invention, the diode crystal is made on the basis of gallium arsenide and heterostructures based on it with complex unipolar-bipolar conductivity in the direct on state, the cathode part of which comprises a highly doped n⁺-type conductivity gallium arsenide single-crystal substrate, an epitaxial gallium arsenide single-crystal layer of n-type conductivity, and the anode part of the crystal comprises electrical interconnected parallel multicells of a field-effect transistor with a combined gate (TCG) in the form of p⁺-n junctions with an ohmic contact to the p⁺-region, p⁺- type of conductivity of a heterolayer of gallium, arsenic and aluminium atoms, a thin monolayer of gallium arsenide of p⁺-type conductivity, electrically connected through an ohmic contact with p⁺-regions and electrically connected through an ohmic contact to local source regions of the TCG with a Schottky barrier.

EFFECT: invention provides design of hyper-speed high-voltage power diodes with minimal forward voltage drop, ultra-low reverse resistance recovery times, increased operating current density and doubling operating temperature compared to known fast recovery diodes.

1 cl, 3 dwg