METHOD FOR FORMING SUPER-DOPED GRAY MICRO-STRUCTURED CRYSTALLINE LAYER ON SURFACE OF SILICON Russian patent published in 2018 - IPC C30B31/04 C30B30/02 C30B29/06 H01L21/22 H01L21/268 H01L31/236 H01L31/28 H01L31/18 B82B3/00 B82Y30/00 B82Y40/00 

FIELD: physics.

SUBSTANCE: invention relates to a method for forming a super-doped grey micro-structured crystalline layer on the surface of silicon, which can be used in solar energy, optoelectronics, night and thermal imaging. The method is to place the surface of silicon under a reactive liquid medium of the sulphur-containing compounds, and to irradiate the surface of silicon with the pulses of the focused laser radiation of the nanosecond infrared range duration. The energy density of the laser radiation is set sufficient for the penetration of this radiation through the fluid to the surface of silicon by decomposition of molecules of the sulfur-containing compounds to release the sulfur atoms and to heat the surface of silicon to a temperature at which diffusion occurs in atoms of sulfur together with its ablative micro-structuring and annealing.

EFFECT: multiple extension of the region and the value of the high absorption capacity of the surface layer of silicon in the super-doping process with the sulfur atoms under the action of laser irradiation while maintaining its crystalline nature.

7 cl, 5 dwg