LIGHT TRANSISTOR Russian patent published in 2013 - IPC H01L23/38 H01L29/70 

FIELD: electrical engineering.

SUBSTANCE: in contrast to a common bipolar transistor according to the invention one p-n-junction of the transistor is made as a light-emitting junction. For p-n-p-transistor the emitting junction is base - emitter and for n-p-n-transistor the emitting junction is collector - base junction. When an electron moves through the junction with energy loss then this energy is emitted in the form of heat or emission and when it moves with energy gain then heat is absorbed at this junction.

EFFECT: use of this device will allow reducing heat generation by bipolar transistors, improving high-efficiency of heat transfer, reducing sizes of heat sink and increasing intensity of heat removal system.

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