FIELD: physics.
SUBSTANCE: invention relates to active electronic components. Photodetector on cascade transistors with light-emitting p-n-junctions and photosensitive n-p-junctions, made in the form of a cascade of semiconductor transistors, the transistors in the cascades are connected through optoelectronic pairs.
EFFECT: invention allows to improve the sensitivity of photodetectors with a simultaneous decrease in weight and size parameters.
1 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
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RU2673987C1 |
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| FIELD THYRISTOR WITH NON-ISOLATED PHOTOSENSITIVE OPTICAL GATE AND LIGHT-EMITTING P-N-JUNCTION | 2018 |
|
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|
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| LIGHT TRANSISTOR WITH TWO EMITTING JUNCTIONS | 2014 |
|
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| LIGHT TRANSISTOR WITH HIGH EFFICIENCY | 2012 |
|
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| EFFICIENT LIGHT TRANSISTOR | 2014 |
|
RU2587534C1 |
| LIGHT TRANSISTOR | 2012 |
|
RU2487436C1 |
| LIGHT THYRISTOR | 2014 |
|
RU2562744C2 |
| HIGH-VOLTAGE PLANAR P-N JUNCTION | 1991 |
|
RU2019894C1 |
