LIGHT THYRISTOR Russian patent published in 2015 - IPC H01L33/64 

Abstract RU 2562744 C2

FIELD: electricity.

SUBSTANCE: invention relates to active electronic components. According to the invention in contrast to the common light transistor with one emitting p-n-junction in the light thyristor in opened state two junctions are emitting, and one junction absorbs the thermal energy. At that heat generation is reduced in two opened p-n-junctions due to emission, thus permitting manufacturing of the thyristors with high power due to reduced risk of thermal break-down. At that, the higher emission frequency of the junctions is the higher energy will be lost as emission, and the higher cold will be generated by the closed junction of the light thyristor.

EFFECT: device use according to the invention increases efficiency of the heat transfer with simultaneous decreasing of the weight and size of the heatsink.

1 dwg

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RU 2 562 744 C2

Authors

Ismailov Tagir Abdurashidovich

Gadzhiev Khadzhimurat Magomedovich

Gadzhieva Soltanat Magomedovna

Chelushkin Dmitrij Alekseevich

Chelushkina Tat'Jana Alekseevna

Dates

2015-09-10Published

2014-01-14Filed