FIELD: instrument making.
SUBSTANCE: invention can be used for production of electronic components of microcircuits. Invention consists in that a cheap light transistor is made in form of bipolar transistor of n-p-n structure and p-n-junction, on which electrons from n zone to p zone is formed in form of light-emitting and n-p-junction, on which electrons from p zone to n zone in form of photo-transducer, collector, emitter and base are made in form of mirror metal electrodes.
EFFECT: technical result is increase in efficiency of bipolar transistors in pulse mode.
1 cl, 1 dwg
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SU1797458A3 |
