FIELD: electricity.
SUBSTANCE: light transistor with high efficiency made in the form of a bipolar transistor with p-n-p or n-p-n-structure, according to the invention in it the p-n-transition, in which electrons move from p zone into n zone, is formed as light-emitting, and the n-p-transition, in which electrons move from the n zone to the p zone - as photoabsorbing, and at the same time they form an integral optically coupled isolator inside the transistor itself.
EFFECT: increased efficiency of bipolar transistors in pulse mode of operation.
1 dwg
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