FIELD THYRISTOR WITH NON-ISOLATED PHOTOSENSITIVE OPTICAL GATE AND LIGHT-EMITTING P-N-JUNCTION Russian patent published in 2019 - IPC H01L31/147 H01L31/167 

FIELD: electronics.

SUBSTANCE: invention relates to electronic components of microcircuits. Field thyristor is made of an n-type semiconductor with one non-isolated photosensitive optical gate on a photosensitive p-type semiconductor. When photons fall on a photosensitive optical gate, electrons acquire energy and can leave the photosensitive optical gate, giving it a positive charge. This, in turn, will lead to passage of electrons from the source with negative potential to drain with positive potential, as well as towards the photosensitive optical gate through the light-emitting p-n-junction, what will cause generation of photons. Exposure of these photons to the photosensitive optical gate leads to an even larger output of electrons and an increase in the positive potential on it. As a result, the field thyristor will be completely opened and maximum allowable current will flow through it.

EFFECT: invention provides faster thyristor operation.

1 cl, 1 dwg