FIELD: electronics.
SUBSTANCE: invention can be used for removing heat from electronic components. This invention consists in fact that light transistor with two radiating junctions is made in form of bipolar transistor with p-n-p or n-p-n structure, where both transitions are formed in form of light-emitting, and transistor is connected with common base, wherein both power supply source to base-emitter and base-collector are connected so that both p-n junction can be opened or closed, wherein in transistor there is additional amplification due to higher conductivity of semiconductor materials during absorption of photons emitted by p-n junctions.
EFFECT: technical result is reducing heat generation of bipolar transistors.
1 cl, 1 dwg
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