FIELD: electrical engineering.
SUBSTANCE: invention relates to electronic components of microcircuits. Bipolar semiconductor transistor with thyristor effect according to invention is made in form of semiconductor n-p-n-structure, wherein electrode of base instead of usual metal electrode is made of photosensitive material, in form of metal with low level of work of electrons, base-emitter transition is light-emitting, and base-collector transition is photosensitive. Invention is aimed at increasing speed of bipolar transistors in pulse mode of operation. As materials for fabrication of bipolar semiconductor transistor with thyristor effect there can be used gallium phosphide (GaP), gallium nitride (GaN), silicon carbide (SiC).
EFFECT: bipolar semiconductor transistor with a thyristor effect can be used as a precision photon sensor.
1 cl, 1 dwg
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