FIELD: electricity.
SUBSTANCE: in method for growing of silicon-germanium heterostructures by method of molecular-beam epitaxy of specified structures due to silicon and germanium evaporation from separate crucible molecular sources on the basis of electronic-beam evaporators, silicon evaporation is done in automatic crucible mode from silicon melt in solid silicon shell, and germanium is evaporated from germanium melt in silicon insert, which represents a previously spent hollow residue, produced as a result of silicon evaporation in automatic crucible mode, and arranged in crucible cavity of cooled case of crucible unit of electron-beam evaporator used to develop molecular flow of germanium. At the same time process of epitaxy is controlled with account of germanium deposition speed selection, determined from given dependence.
EFFECT: increased stability and expansion of assortment of generated high-quality silicon-germanium heterostructures as a result of improved control of molecular-beam epitaxy of heterostructures due to accurate control of silicon and germanium deposition mode in the optimal range of speed values, reduction of concentration of uncontrolled admixtures in heterostructures produced by proposed method, and reduction of resource expenditures for preparation of process equipment.
2 cl, 3 dwg
