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(19)

(11)

2 493 297

(13)

(51)

IPC

C30B15/02(2006-01-01)

C30B15/36(2006-01-01)

C30B29/08(2006-01-01)

C30B29/64(2006-01-01)

C30B33/00(2006-01-01)

G02B1/02(2006-01-01)

B29D11/00(2006-01-01)

(21) (22)

Application

2012107335/05, 2012-02-27

(24)

Start date

2012-02-27

(22)

Actual filing date

2012-02-27

(45)

Published

2013-09-20

(72)

Inventor

Smirnov Jurij Mstislavovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet"

METHOD OF GROWING GERMANIUM MONOCRYSTALS Russian patent published in 2013 - IPC C30B15/02 C30B15/36 C30B29/08 C30B29/64 C30B33/00 G02B1/02 B29D11/00

Abstract RU 2493297 C1

FIELD: chemistry.

SUBSTANCE: germanium monocrystals are grown in crystallographic direction [111] after holding at melting point for 1-2 hours, with temperature gradient at the crystallisation front in the range of (10.0÷18.0) K/cm, which provides dislocation density on the level of (2·10⁴-5·10⁵) per cm².

EFFECT: invention enables to obtain germanium monocrystals with considerable increase in signal reception area due to directed introduction of a given concentration of dislocations into the grown crystal and conversion of said dislocations from standard crystal defects to active elements of infrared optical devices.

3 dwg, 1 tbl

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RU 2 493 297 C1

Authors

Smirnov Jurij Mstislavovich

Dates

2013-09-20—Published

2012-02-27—Filed