FIELD: thermonuclear engineering.
SUBSTANCE: invention relates to the field of thermonuclear technology and can be used to create a receiving plate of a tokamak divertor based on the concept of the current layer of liquid lithium. A copper substrate is placed in a reaction chamber with heated walls, first a vacuum is created in it, and then hydrogen is fed into it at a speed of 3 l/h to a pressure of 5 mm Hg with simultaneous activation of the wall heaters, thus heating the substrate to a temperature of at least 500°C and no more than 0.8 of the absolute melting point of copper. The substrate is kept at this temperature for no more than 1 h. After that, the hydrogen supply rate is increased to 9 l/h and tungsten hexafluoride is introduced from a vessel preheated to a temperature not exceeding 50°C at a speed of 3 l/h so that the total gas pressure in the mixture remains constant and equal to 5 mm Hg, and the volume ratio is WF6:H2 is equal to 1:3. Thus, tungsten is applied to the substrate by decomposition of tungsten hexafluoride for at least 3 hours. The thickness of the tungsten layer is at least 30 mcm and no more than 0.5 mm. Further, the supply of hydrogen and tungsten hexafluoride is stopped and a vacuum is created in the reaction chamber. Cooling is carried out in a hydrogen environment, for which it is again fed into the reaction chamber to a pressure of at least 200 mm Hg.
EFFECT: resulting receiving plate of the tokamak divertor has improved performance due to good thermal conductivity, resistance to thermal cycling and corrosion resistance to lithium, which improves its service life.
1 cl, 6 dwg, 2 tbl, 2 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR CREATING A COPPER COATING ON STEEL FOIL FOR THE RECEIVING PLATE OF A TOKAMAK DIVERTOR | 2021 |
|
RU2767920C1 |
METHOD OF FABRICATING HEAVY MELTING POTS MADE OF TUNGSTEN | 2007 |
|
RU2355818C1 |
ALLOYED TUNGSTEN PRODUCED BY CHEMICAL SEDIMENTATION FROM GAS PHASE | 2005 |
|
RU2402625C2 |
TUNGSTEN HEXAFLUORIDE PRODUCING METHOD | 2006 |
|
RU2315000C1 |
METHOD FOR MANUFACTURING OF ELECTRON EMITTERS AND DEVICE FOR ITS IMPLEMENTATION | 2010 |
|
RU2447537C1 |
METHOD OF PRODUCING NANODISPERSE POWDERS IN MICROWAVE DISCHARGE PLASMA AND DEVICE TO THIS END | 2010 |
|
RU2455061C2 |
METHOD OF PREPARING THIN-FILM METAL STRUCTURE OF TUNGSTEN ON SILICON | 2008 |
|
RU2375785C1 |
AMORPHOUS COPPER-BASED STRIP SOLDER | 2011 |
|
RU2464143C1 |
SUPERABRASIVE MATERIAL WITH PROTECTIVE ADHESIVE COATING AND METHOD FOR PRODUCING SAID COATING | 2014 |
|
RU2666390C2 |
METHOD OF PRECIPITATING TUNGSTEN PLATING | 0 |
|
SU787490A1 |
Authors
Dates
2023-03-22—Published
2022-02-14—Filed