IGNITION-STAGE THYRISTOR WITH DECOUPLING IGNITION STAGE Russian patent published in 2013 - IPC H01L29/74 

FIELD: electricity.

SUBSTANCE: in thyristor there is envisaged igniting stage structure which contains at least one igniting stage and each of them contains n-doped igniting staged emitter embedded into p-doped base and located at distance from n-doped emitter. Igniting staged electrode contacts at the front side with one of igniting staged emitters and has the first contact surface with it. At the second surface igniting staged electrode contacts p-doped base at the side faced to n-doped emitter of one of igniting emitters at the front side. The second contact surface is spaced at distance both from the first contact surface and one of igniting staged emitters. Concentration of dope additive along the axis perpendicular to vertical direction has two local maximums at distance from each other for p-conductivity and base section of n-type conductivity is located between these two maximums.

EFFECT: invention provides ignition stage thyristor which is protected in better way when voltage pulse occurs during recovery of back resistance.

14 cl, 8 dwg