FIELD: semiconductor electronics and microelectronics; multipurpose devices. SUBSTANCE: proposed semiconductor device has structure that enables its functioning depending on connection of device leads as complementary n MOS and p MOS transistors, or as complementary bipolar n-p-n and p-n-p transistors, or as two new complementary components each provided with two control electrodes, and also as double-emitter transistor, thyristor, and as current-merged logic gate. EFFECT: enlarged functional capabilities. 10 dwg
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