FET-BASED PROBE WITH NANODIMENSIONAL CHANNEL Russian patent published in 2015 - IPC G01Q70/00 H01L29/772 B82Y40/00 

FIELD: instrumentation.

SUBSTANCE: invention relates to measuring equipment, it is a fet-based probe with a nanodimensional channel and can be used for the determination of physical and chemical and electric parameters of nanodimensional objects of the physical, chemical and biological nature. The probe includes the nanodimensional sensitive element placed on a tip and forming the transistor channels, electrodes placed from one side from the tip, connected with the sensitive element and which are functioning as a drain and a source of the transistor. The sensitive element is made in the thin-film structure silicon-on-insulator, formed on a substrate. The silicon layer has a gradient changing concentration of the alloying admixture and is made so that from a free surface, at least on a half of the thickness, it has metal, and on the remained thickness to the insulator layer - semiconductor conductivity. Electrodes are implemented on the named free surface, divided by a gap and have the area which is narrowed towards the tip, and the sensitive element is a fragment of the silicon layer with semiconductor conductivity placed between the electrodes, formed by the removal of a part of the silicon with metal conductivity.

EFFECT: improvement of the spatial resolution of the probe at keeping of sensitivity and simplification of manufacturing techniques.

7 cl, 8 dwg