MATRIX AUTO EMISSION CATHODE AND METHOD FOR MANUFACTURE THEREOF Russian patent published in 2018 - IPC H01J9/02 H01J1/304 

FIELD: electrical engineering.

SUBSTANCE: invention relates to devices of solid-state and vacuum electronics, in particular, to auto-emission elements based on the Si-SiC-graphene system used as cathodes: to diodes, to triodes and to devices based on them. Matrix auto-emission element with cathodes based on the Si-SiC-graphene system includes a single-crystal silicon substrate on the front surface of which a cathode unit is formed in the form of multi-point emission structures having the shape of a cone, at the tip of the emission structure, films of underlying silicon carbide and graphene are formed, a contact layer formed on the reverse surface of the semiconductor substrate consisting of an adhesive layer located on the reverse surface of the semiconductor substrate and a current-carrying layer disposed on the surface of the adhesive layer.

EFFECT: increase in the current of the field emission and the time stability of this quantity, a reduction in the operating voltages in vacuum microelectronics devices based on carbonaceous materials and, as a result, the extension of their service life.

2 cl, 4 dwg