FIELD: physics.
SUBSTANCE: invention relates to the field of semiconductor industry, in particular to integrated microcircuits of galvanic decoupling intended for switching of power relay current in systems with redundancy of control systems, in particular, for equipment of rocket-and-space equipment. Integral microcircuit of galvanic decoupling consists of galvanic decoupling input and input ground contact pad connected to high-frequency sinusoidal signal generating unit, which is connected via spiral transformer with rectifier. Output of control of gate of external power MOS transistor and contact pad of output ground is connected to rectifier, between which high-resistance resistor is connected to reset potential of gate of external power MOS transistor. Integrated microcircuit chip is made in the form of a film integrated microcircuit chip on a sapphire substrate. Method of making an integrated microcircuit of galvanic decoupling involves depositing a silicon film on a sapphire substrate and subsequent processing thereof with formation of elements of an integrated microcircuit chip. Input and output parts of microcircuit chip are formed on sapphire substrate, which are isolated from each other with possibility of inductive interaction through spiral transformer, wherein in the input part of the microcircuit the galvanic decoupling input and the input ground contact are formed, which are connected to the high-frequency sinusoidal signal generation unit, output part of the microcircuit is equipped with a rectifier connected to the output of control of the gate of the external power MOS transistor and to the contact platform of the output ground.
EFFECT: technical result of the invention is reduction of dimensions of integrated microcircuit of galvanic decoupling at improvement of its reliability and radiation resistance.
10 cl, 5 dwg
