SHF-TRANSISTOR Russian patent published in 2014 - IPC H01L29/72 

FIELD: electricity.

SUBSTANCE: invention is related to semiconductor devices intended to amplify SHF-electromagnetic oscillations. The SHF transistor contains a basic substrate of silicium, a heat-conductive polycrystalline diamond layer, a heteroepitaxial structure, a buffer layer, a source, a gate, a drain and ohmic contacts. At that the basic substrate of silicium has thickness less than 10 mcm, the heat-conductive polycrystalline diamond layer has thickness at least equal to 0.1 mm, and at the surface of heteroepitaxial structure made of SiGe, between the source, gate and drain there is an auxiliary layer of heat-conductive polycrystalline diamond and barrier layers of hafnium dioxide and aluminium oxide. The barrier layers of hafnium dioxide and aluminium oxide have total thickness of 1.0-4.0 nm and besides they are placed under the gate, directly at the barrier channel.

EFFECT: receiving high values of breakdown voltage, SHF-power level, low levels of noise, thermal resistance, loss current and consumed power.

2 cl, 3 dwg