HETEROSTRUCTURE MODULATED-DOPED FIELD-EFFECT TRANSISTOR Russian patent published in 2014 - IPC H01L29/772 B82B1/00 

FIELD: chemistry.

SUBSTANCE: heterostructure modulated-doped field-effect transistor comprises a flange, a pedestal, a heteroepitaxial structure, a buffer layer, a source, a gate, a drain and ohmic contacts. The pedestal has thickness of 30-200 mcm and is made from a heat-conducting layer of CVD polycrystalline diamond with implanted Ni and annealed surface layers on two sides. On top of the pedestal there is a substrate made from monocrystalline silicon with thickness of 10-20 mcm and a buffer layer. On the surface of the heteroepitaxial structure, between the source, the gate and the drain, there are series-arranged additional layers of heat-conducting polycrystalline diamond, a barrier layer of hafnium dioxide and a barrier layer of aluminium oxide. The barrier layers have total thickness of 1.0-4.0 nm. Furthermore, in the gate region, the buffer layers are situated under the gate, directly on the epitaxial structure in the form of a layer of a solid AlGaN solution.

EFFECT: improved heat removal from the pedestal and the active region of the transistor, ensuring minimal current leakage from the gate and achieving the lowest noise factor in the GHz range.

6 cl, 6 dwg