BIPOLAR TRANSISTOR Russian patent published in 2014 - IPC H01L29/737 

FIELD: electricity.

SUBSTANCE: bipolar transistor manufactured on the basis of heteroepitaxial structures includes sapphire substrate with series-connected buffer layer of undoped GaN, subcollector layer of heavily doped GaN with n⁺-type of conductivity, collector GaN with n-type of conductivity, base containing two layers of solid solution In_xGa_1-xN with p⁺-type of conductivity, emitter containing two layers of Al_yGa_1-yN with n-type of conductivity, contact layers and ohmic contacts. At that bipolar transistor is made so that composition of solid solutions Al_yGa_1-yN and In_xGa_1-xN of base and emitter layers can be changed, and also concentrations of agents doping base and emitter can be changed.

EFFECT: improving technical characteristics of the device, in particular, reducing value of emitter capacitance, resistance of base, collector-base capacitance, enhancing efficiency of emitter and limiting frequency.

1 dwg