METHOD OF IMPLANTING GAS IONS IN METALS AND IONS Russian patent published in 2014 - IPC C23C14/48 

Abstract RU 2509174 C1

FIELD: metallurgy.

SUBSTANCE: nitrogen ions and inert gas ions are implanted in turns in processed surface. Dose of implanted inert gas ions is set to (0.1…0.25)-D, where D is the dose of implanted nitrogen ions makes (1…5)·1017 ion/cm2.

EFFECT: higher wear resistance due to larger surface layer.

4 dwg, 1 tbl, 1 ex

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RU 2 509 174 C1

Authors

Uchevatkina Nadezhda Vladimirovna

Ovchinnikov Viktor Vasil'Evich

Borovin Jurij Mikhajlovich

Luk'Janenko Elena Vladimirovna

Jakutina Svetlana Viktorovna

Kravchenkov Anton Nikolaevich

Dates

2014-03-10Published

2012-06-25Filed