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(19)

(11)

2 494 037

(13)

(51)

IPC

B82B3/00(2006-01-01)

H01L21/00(2006-01-01)

H05K3/22(2006-01-01)

H05K3/20(2006-01-01)

(21) (22)

Application

2012117015/07, 2012-04-27

(24)

Start date

2012-04-27

(22)

Actual filing date

2012-04-27

(45)

Published

2013-09-27

(72)

Inventor

Latyshev Jurij Il'IchBykov Viktor AleksandrovichFrolov Aleksandr VladimirovichOrlov Andrej Petrovich

(73)

Holder

Zakrytoe Aktsionernoe Obshchestvo Mdt"

METHOD OF PRODUCTION OF ATOMIC-THIN SINGLE-CRYSTALLINE FILMS Russian patent published in 2013 - IPC B82B3/00 H01L21/00 H05K3/22 H05K3/20

Abstract RU 2494037 C1

FIELD: nanotechnology.

SUBSTANCE: invention relates to the field of nanotechnology and can be used for production of atomic-thin single-crystalline films of various multilayer materials. In the method of production of atomic-thin single-crystalline films, comprising the selection of thin single-crystalline fragments of starting layered single crystals, gluing them to the working substrate is carried out using epoxy adhesive, and the consequent removal of layers from thin single-crystalline fragments using, for example, adhesive tape.

EFFECT: simplification of the manufacturing technology of atomic-thin single-crystalline films.

11 cl, 4 dwg

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RU 2 494 037 C1

Authors

Latyshev Jurij Il'Ich

Bykov Viktor Aleksandrovich

Frolov Aleksandr Vladimirovich

Orlov Andrej Petrovich

Dates

2013-09-27—Published

2012-04-27—Filed