METHOD OF JOINING SILICON WAFERS OF MICROELECTROMECHANICAL SYSTEMS WITH AN INSULATING LAYER OF SILICON DIOXIDE BETWEEN THEM Russian patent published in 2021 - IPC H01L31/18 

FIELD: microelectronic engineering.

SUBSTANCE: invention relates to the field of microelectronic engineering. The method of joining MEMS silicon wafers with an insulating silicon dioxide layer between them consists in the fact that silicon dioxide layers are applied by thermal oxidation to each of the opposite sides of one silicon wafer. Then the wafer is placed on the support surface and plasma-chemical etching of the silicon wafer is performed on the surface of the silicon wafer from the side of the deposited silicon dioxide layer. Then, an additional silicon wafer is attached to the etched side of the silicon wafer, and then the silicon wafer is flipped and positioned on the support surface through the additional silicon wafer. And a silicon wafer undergoes plasma-chemical etching on the other side of the deposited layer of silicon dioxide. Then the additional plate is removed, and the contact surface of the silicon plate with the etching pattern is cleaned with the N-methyl-2-pyrrolidone solvent. Thereafter, the said silicon wafer is bonded to another silicon wafer through a layer of silicon dioxide, to which the additional wafer was previously attached, by the thermal splicing method.

EFFECT: invention increases the functional reliability of multilayer MEMSs by eliminating the parasitic conductivity of the insulating layer of silicon dioxide.

1 cl, 2 dwg