FIELD: physics.
SUBSTANCE: invention relates to microelectronics and specifically to methods of ensuring quality and reliability of semiconductor articles (transistors, integrated circuits etc) and can be used for comparative assessment of reliability of batches of semiconductor articles during both the manufacturing process and acceptance control at radio-electronic equipment manufacturing companies. The method involves measuring an information-bearing electrical parameter in arbitrary identical samples from batches of semiconductor articles (not less than 25 items from each batch) before and after exposure to five ESR pulses of both polarities, with potential which is allowable according to specifications, and then for the last measurement, calculating the structural-process margin for the upper and lower limits of the parameter, and then calculating the average measurement value of the information-bearing parameter. Comparative reliability of the two batches is determined from the values of the margin and average measurement values of the information-bearing parameter.
EFFECT: improved functional capabilities of the method.
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Authors
Dates
2014-04-10—Published
2011-10-04—Filed