FIELD: physics.
SUBSTANCE: invention relates to microelectronics and specifically to methods of ensuring reliability of semiconductor articles (transistors and integrated circuits), and can be used to ensure high reliability of batches of articles at both the manufacturing phase and acceptance control at radio-electronic equipment manufacturing companies. The method involves measuring an information-bearing electrical parameter or parameters at normal temperature after 100 hours of burn-in test in specification reliability test mode, after exposure to electrostatic discharge with allowable voltage given in specifications, with five discharges in each of two directions and then carrying out annealing at maximum allowable temperature according to specifications for 2-4 hours. Test and measurement results are used to determine a coefficient K for each articles, from which a low-reliability article is determined.
EFFECT: high reliability and broader functional capabilities of the method of screening semiconductor articles of low quality from a batch of articles of high reliability.
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Authors
Dates
2014-04-10—Published
2011-06-07—Filed