METHOD FOR COMPARATIVE ASSESSMENT OF RELIABILITY OF BATCHES OF SEMICONDUCTOR ARTICLES Russian patent published in 2015 - IPC G01R31/26 

Abstract RU 2538032 C2

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to microelectronics and specifically to methods of ensuring quality and reliability of semiconductor articles (transistors and integrated circuits), and can be used for comparative assessment of reliability of batches of semiconductor articles at both the manufacturing phase and acceptance control at radio-electronic equipment manufacturing enterprises. The method includes measuring, on random identical samples from batches, the square of noise voltage U n 2 ¯ at frequency of up to 200 Hz before and after exposure to at least five electrostatic discharge pulses of both polarities with the maximum specified potential. Measurements are taken at the transistor "emitter - base" and the integrated circuit "input - common point" leads. The value of the coefficient K = U n e d p 2 ¯ / U n v 2 ¯ is then calculated, where U n v 2 ¯ and U ¯ n e d p 2 are values of the noise voltage square before and after exposure to the electrostatic discharge pulses, and the batches of the articles are compared from the average values of the coefficient K.

EFFECT: broader functional capabilities.

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RU 2 538 032 C2

Authors

Gorlov Mitrofan Ivanovich

Smirnov Dmitrij Jur'Evich

Zhukov Dmitrij Mikhajlovich

Dates

2015-01-10Published

2010-07-20Filed